| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a graft polymer for a chemical amplifying photoresist suitable for ArF excimer laser beams and a photoresist composition. <P>SOLUTION: The graft polymer for the photoresist is prepared by copolymerizing a monomer having excellent dry etching resistance with a monomer having a protecting group deprotecting by actions of an acid generated by a photoreaction and preferably comprises (a) and/or (b). (a) a graft polymer has a backbone polymer moiety obtained by polymerizing a monomer component having the excellent dry etching resistance and a graft moiety prepared by polymerizing the monomer component having the protecting group deprotecting by the actions of the acid generated by the photoreaction and (b) a graft polymer has the backbone moiety obtained by polymerizing the monomer component having the protecting group deprotecting by the actions of the acid generated by the photoreaction and the graft moiety prepared by polymerizing the monomer component having the excellent dry etching properties. <P>COPYRIGHT: (C)2003,JPO |
