发明名称 |
Back illuminated photodiodes |
摘要 |
A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.
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申请公布号 |
US2003178636(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
US20030361233 |
申请日期 |
2003.02.10 |
申请人 |
JDS UNIPHASE CORPORATION |
发明人 |
KWAN STEVEN;BEN-MICHAEL RAFAEL;ITZLER MARK |
分类号 |
H01L31/0304;H01L31/103;H01L31/107;(IPC1-7):H01L31/032;H01L35/26 |
主分类号 |
H01L31/0304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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