发明名称 Method of manufacturing semiconductor device
摘要 A semiconductor device manufacturing method according to the present invention comprising: arranging a dam made of a highly heat-shrinkable material on a surface of a circuit substrate, wherein the dam defines a region including a semiconductor element, a conductor, and part of a conductive pattern connected to one end of the conductor; injecting a sealer into a region defined by the dam and using the sealer to seal the semiconductor element, the conductor, and part of the conductive pattern connecting with one end of the conductor; and cooling the dam to remove it. Namely, the method can decrease costs, shorten the manufacturing time, and provide miniaturized COB-mounted semiconductor devices.
申请公布号 US2003178709(A1) 申请公布日期 2003.09.25
申请号 US20020259443 申请日期 2002.09.30
申请人 ANDOH SEIJI 发明人 ANDOH SEIJI
分类号 H01L23/28;H01L21/56;H01L23/13;H01L23/31;(IPC1-7):H01L23/495 主分类号 H01L23/28
代理机构 代理人
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