LATERAL SEMICONDUCTOR-ON-INSULATOR STRUCTURE AND CORRESPONDING MANUFACTURING METHODS

摘要

A semiconductor structure (10) has a low bandgap semiconductor layer (11), a buried insulator layer (12) below the low bandgap semiconductor layer (11), and a wide bandgap semiconductor substrate (13). The low bandgap semiconductor layer (11) may be for example silicon, SiGe, GaAs or a heterojunction. The wide bandgap semiconductor layer (13) may be for example silicon carbide or diamond. A semiconductor device may be made by bonding a wide bandgap semiconductor wafer (13) via an insulator layer (12) to a low bandgap semiconductor wafer (11) and subsequently forming a semiconductor device in the low bandgap semiconductor wafer (11).