Method for evaluating charging status in a storage transistor of memory cell in a multiple-programmable semiconductor memory uses a preset reading-voltage and evaluatory channel resistance

摘要

A preset reading-voltage is applied to a control connection (42) on a storage transistor (38) for a memory cell (37). A means (31) of reference voltage linked to the memory cell via a wire (35) supplies preset currents or voltages. An evaluatory device (33) linked to the wire uses channel resistance to evaluate charging status in the storage transistor. An Independent claim is also included for a device for evaluating charging status in a storage transistor for a memory cell in a multiple-programmable semiconductor memory.