| 摘要 |
A simple and low cost semiconductor light emission element exerting high performance and a process for producing the same are provided. The semiconductor light emission element contains a nitride semiconductor layer containing at least one or more element selected from Group IIIA elements and one or more element selected from Group VA element, a dissimilar semiconductor having a polarity different from the nitride semiconductor layer, and a light emission layer provided between the dissimilar semiconductor and the nitride semiconductor, in which electrons or positive holes are injected from semiconductors of the dissimilar semiconductor and the nitride semiconductor layer to the light emission layer to carry out light emission.
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