| 摘要 |
PROBLEM TO BE SOLVED: To provide a vatiable-capacitance diode device that can reduce tracking errors. SOLUTION: On a semiconductor substrate comprising a base 1 and an epitaxial layer 2, first and second variable-capacitance diode elements VCD(A) and VCD(B) are formed. In this case, the effective area of at least one portion of the first variable-capacitance diode element VCD(A) is set smaller than that of a portion, to which the second variable-capacitance diode element VCD(B) corresponds. When RF and OSC signals, having greatly different levels, are superimposed on a DC bias voltage for applying, C-V characteristics in the first variable-capacitance diode element VCD(A) at the side of a local oscillation circuit approaches those of the second variable-capacitance diode element VCD(B) at the side of a high frequency circuit to reduce the tracking errors.
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