| 摘要 |
PROBLEM TO BE SOLVED: To develop a new nanoscale processing/manufacturing technology for the next-generation industry which has a spatial resolution from a nanoscale to an atomic level scale and provides large area processing in a short time and mass production technology. SOLUTION: On a surface of a semiconductor, an oxide, an organic crystal, or an ionic crystal, for example, by means of local doping by a convergence ion implantation, electric field application by atomic level in-depth probing using a scanning type tunneling microscope, or by using the electric field effect by means of a gate, a hole dope area and an electronic dope area are created locally, and the areas are electronically excited with a laser light, an emitted light and an electron ray so that the electronic excitation atom movement is limited to the local area of the nanoscale and atom release is induced. On the surface of the substance, atom deletion of the nanoscale structure, ultrafine quantum thin line drawing, two-dimensional super-structure, a quantum thin line, or a quantum dot can be performed or formed to provide the surface nanoscale structure and a quantum device. COPYRIGHT: (C)2003,JPO |
