发明名称 |
Alignment mark having a protective oxide layer for use with shallow trench isolation |
摘要 |
The present invention provides a semiconductor device including large topography alignment marks, and a method of manufacture therefor. The method of manufacturing the semiconductor device includes forming an isolation trench and an alignment mark in a substrate to a substantially common depth, and forming an etch stop layer in the alignment mark.
|
申请公布号 |
US6624039(B1) |
申请公布日期 |
2003.09.23 |
申请号 |
US20000615122 |
申请日期 |
2000.07.13 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
ABDELGADIR MAHJOUB A.;KUEHNE STEPHEN C.;MAURY ALVARO;SHIVE SCOTT F. |
分类号 |
H01L21/762;H01L23/544;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|