发明名称 |
Semiconductor device having a protective circuit |
摘要 |
A protective circuit in a semiconductor device includes a protective n-channel MOS transistor connected between the power source line and the ground line, with the gate and drain being connected together, and an n-p-n transistor having a base connected to the source of the protective n-channel MOS transistor and connected between the power source line and the ground line. The protective circuit disposed in a low-voltage semiconductor device has a lower power dissipation due to a low junction leakage current.
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申请公布号 |
US6624479(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20010837823 |
申请日期 |
2001.04.18 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
SAWAHATA KOICHI |
分类号 |
H01L27/04;H01L21/822;H01L21/8238;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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