发明名称 |
Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor |
摘要 |
The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region, the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench.
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申请公布号 |
US6625367(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20010934098 |
申请日期 |
2001.08.21 |
申请人 |
TRIQUINT TECHNOLOGY HOLDING CO. |
发明人 |
COULT DAVID G.;DERKITS, JR. GUSTAV E.;LENTZ CHARLES W.;SEGNER BRYAN P. |
分类号 |
H01L31/0224;H01S5/042;(IPC1-7):G02B6/13;H01L31/00;H01L31/06 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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