发明名称 |
Process for removing a silicon-containing material through use of a byproduct generated during formation of a diffusion barrier layer |
摘要 |
A process for selectively removing a silicon-containing material through use of a byproduct of a chemical vapor deposition is disclosed. The process includes fabricating an insulating film upon a silicon base layer such that the insulating film includes a cavity. A diffusion barrier layer is deposited into the cavity. The diffusion barrier layer is formed during a chemical vapor deposition which produces an alkyl halide as a byproduct. A photoresist layer is fabricated upon a silicon-containing material. A portion of the photoresist is removed, thereby exposing a portion of the silicon-containing material. The exposed portion of the silicon-containing material is removed with a chemical etch solution including the alkyl halide.
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申请公布号 |
US6624067(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20010782533 |
申请日期 |
2001.02.13 |
申请人 |
BAE SYSTEMS AND INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
发明人 |
POLAVARAPU MURTY S. |
分类号 |
H01L21/285;H01L21/306;H01L21/3213;H01L21/768;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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