| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a TFT polysilicon thin film with improved and uniform TFT characteristics, and provide a display device by using the thin film. <P>SOLUTION: As to the TFT polysilicon thin film and the display device by using the thin film, the active channel length (S) of the double- or multi-channel TFT has a relation (1) of S=mGs secθ-L, where Gs is the grain size of the polysilicon thin film, m is 1, 2, 3,... integer >0,θis a slanted angle of fatal crystal grain boundary (namely, primary crystal grain boundary) to the vertical direction of the active channel direction, and L is the length of the active channel of the double- or multi-channel TFT. <P>COPYRIGHT: (C)2003,JPO</p> |
