| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor growth apparatus which uses a reflecting board whose reflection efficiency does not lower more than before, even after heat treatment, and also can be improved by cleaning its surface with an HNO<SB>3</SB>-HF aqueous solution as an occasion demands, and returning the surface to its original smooth state. <P>SOLUTION: This vapor growth apparatus supports a wafer by a wafer holding board inside a reaction chamber, has a heater below the wafer supported by the wafer holding board, and causes vapor growth to occur on the surface of the wafer. The heater is provided with the reflecting board which reflects at least the downward heat of the heater, and the reflecting board is made of glasslike carbon. <P>COPYRIGHT: (C)2003,JPO |
