发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND RESIST FLAKING DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and a resist flaking device for solving the problem of damage to an active layer of TFT made up of a silicon-based semiconductor film in a manufacturing process, in which a resist flaking solution becomes strong alkali by its hygroscopic action and corrodes the silicon-based semiconductor film. <P>SOLUTION: The manufacturing method of the semiconductor device includes a first step of forming a silicon-based semiconductor film on the surface of a substrate, a second step of carrying out etching with a mask of a resist pattern, and a third step of forming a protecting film on the exposed face of the silicon-based semiconductor film as a pre-treatment process, and flaking the resist pattern with the resist flaking solution. In addition, the resist flaking device having a protective film forming means is applied to the manufacturing method to solve the problem. <P>COPYRIGHT: (C)2003,JPO</p> |
申请公布号 |
JP2003264195(A) |
申请公布日期 |
2003.09.19 |
申请号 |
JP20020064225 |
申请日期 |
2002.03.08 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA NOBUHIRO;KATAYAMA MASAHIRO |
分类号 |
G02F1/13;G02F1/1368;H01L21/027;H01L21/28;H01L21/336;H01L21/768;H01L29/786;(IPC1-7):H01L21/336;G02F1/136 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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