发明名称 |
SEMICONDUCTOR DEVICE WITH CAPACITOR AND FABRICATING METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor device with a capacitor is provided to prevent a bridge caused by upper sidewalls of adjacent storage nodes by making the width of the upper sidewalls of cylindrical storage nodes smaller than that of the lower sidewalls of the storage nodes. CONSTITUTION: A semiconductor substrate(101) is prepared. A lower storage node(107a) is formed on a predetermined region of the semiconductor substrate. A cylindrical sidewall storage node(110b) extends toward the upper portion of the lower storage node, contacting the edge of the lower storage node. The lower storage node and the sidewall storage node constitutes a storage node(130a) wherein the sidewall storage node has a slanting profile in which the upper diameter of the sidewall storage node is smaller than that of the lower diameter of the sidewall storage node.
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申请公布号 |
KR20030073404(A) |
申请公布日期 |
2003.09.19 |
申请号 |
KR20020012955 |
申请日期 |
2002.03.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, HUN |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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