| 摘要 |
PURPOSE: A method for fabricating a flash memory device is provided to prevent a current loss caused by damaged gate in a self-aligned contact(SAC) process and avoid a pipe line defect caused by a vertical profile of a gate by changing the material of a gate insulation layer. CONSTITUTION: A high molecule material including high molecule monomer having a CH-OH functional group is melted in solvent to be a liquid state. The melted high molecule material of a liquid state is spin-coated on a p-type substrate(11) having an isolation layer(12) and a line for a floating gate. The solvent is eliminated from the coated high molecule material. Heat is applied to the high molecule material to form a crosslink bond inside the coated high molecule material so that a gate insulation layer is formed. A conductive layer for a control gate(20) is formed on the gate insulation layer. The conductive layer of the control gate and the gate insulation layer are patterned to form the control gate. The line for the floating gate is etched to form the floating gate while a part of the substrate for forming a source/drain is exposed. N+ and P+ ions are implanted into the exposed region of the substrate to form a source/drain region.
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