发明名称 METHOD FOR PREVENTING PATTERN COLLAPSE
摘要 PURPOSE: A method is provided to be capable of preventing pattern collapse generated at the edge portion of field and pattern block. CONSTITUTION: A mask comprising a plurality of lines(a) and spacers(b) is prepared. A dummy pattern(c) is formed at one end of the lines(a) for supporting patterns. As the mask, BIM(Binary Intensity Mask), PSM(Phase Shift Mask) or HT-PSM(Half Ton-Phase Shift Mask) is used. By inserting the dummy pattern(c) connected to the one end of the lines(a), the pattern collapse is prevented.
申请公布号 KR20030072677(A) 申请公布日期 2003.09.19
申请号 KR20020011820 申请日期 2002.03.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YEONG DEUK;KWON, WON TAEK
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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