发明名称 |
METHOD FOR PREVENTING PATTERN COLLAPSE |
摘要 |
PURPOSE: A method is provided to be capable of preventing pattern collapse generated at the edge portion of field and pattern block. CONSTITUTION: A mask comprising a plurality of lines(a) and spacers(b) is prepared. A dummy pattern(c) is formed at one end of the lines(a) for supporting patterns. As the mask, BIM(Binary Intensity Mask), PSM(Phase Shift Mask) or HT-PSM(Half Ton-Phase Shift Mask) is used. By inserting the dummy pattern(c) connected to the one end of the lines(a), the pattern collapse is prevented.
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申请公布号 |
KR20030072677(A) |
申请公布日期 |
2003.09.19 |
申请号 |
KR20020011820 |
申请日期 |
2002.03.06 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, YEONG DEUK;KWON, WON TAEK |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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