| 摘要 |
The invention concerns a high frequency power amplifier comprising a chip (23) wherein is implanted a power amplifier circuit (22), a semiconductor substrate (24) provided with integrated passive components (26), and connection lines (28) connecting the power amplifier circuit (22) to the integrated passive components (26). The integrated passive components (26) are connected to the power amplifier circuit (22) so as to adapt input side and/or output side. The chip (23) wherein is installed the power amplifier circuit (22), and the semiconductor (24) provided with integrated passive components (26) are arranged in a standard housing (30). |
