| 发明名称 |
CURRENT LEVELING LAYER INTEGRATED WITH APERTURE FOR INTRACAVITY DEVICE |
| 摘要 |
A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region (14), a tunnel junction, a pair of cladding layers (12a-b) and a substrate (32). Heat generated by the VCSEL dissipates through the cladding layers (12a-b), which utilize an indium phosphide material.
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| 申请公布号 |
WO0248748(A9) |
申请公布日期 |
2003.09.18 |
| 申请号 |
WO2001US41831 |
申请日期 |
2001.08.22 |
| 申请人 |
REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
发明人 |
COLDREN, LARRY;HALL, ERIC, M.;NAKAGAWA, SHIGERU;KIM, JIN, K. |
| 分类号 |
H01S5/024;H01S5/042;H01S5/183;H01S5/30;H01S5/323;H01S5/343;(IPC1-7):H01S3/13 |
主分类号 |
H01S5/024 |
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