METHOD FOR FORMING STORAGE NODE ELECTRODE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a storage node electrode of a semiconductor device is provided to enhance capacitance by maximizing the effective surface area of the storage node electrode. CONSTITUTION: An interlayer dielectric(12), an etch barrier layer(13) and the first sacrificial layer are sequentially formed on a semiconductor substrate(11), wherein the first sacrificial layer is excessively formed in view of the damage in contact etching. The first sacrificial layer is etched and the second sacrificial spacer is formed at both sidewalls of the first sacrificial pattern. The etch barrier layer is etched using the second sacrificial spacer as a mask. A contact hole is then formed by etching the interlayer dielectric using the etch barrier pattern.