发明名称 |
SEMICONDUCTOR MEMORY IMPROVED FOR TESTING |
摘要 |
A synchronous DRAM (SDRAM) or a fast cycle RAM (FCRAM) includes capacitors connected by switches to a signal wire. The switches are controlled to connect and disconnect the capacitors to the signal wire. In a test mode, various combinations of the capacitors are connected to the signal wire and the signal timing is then measured. The signal timing of the memory device can be controlled by selecting which and how many of the capacitors are connected to the signal wire.
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申请公布号 |
US2003177424(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US19990400831 |
申请日期 |
1999.09.21 |
申请人 |
NINOMIYA KAZUHIRO;FUJIOKA SHINYA;SATO YASUHARU |
发明人 |
NINOMIYA KAZUHIRO;FUJIOKA SHINYA;SATO YASUHARU |
分类号 |
G11C11/407;G01R31/28;G11C11/401;G11C11/406;G11C29/00;G11C29/06;G11C29/12;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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