| 摘要 |
The semiconductor memory device includes local input/output (I/O) lines, global I/O lines, and a memory corethat is coupled between a bit line and a complementary bit line. The memory core includes a memory cell array, a bit line equalizer circuit, a PMOS sense amplifier (S/A), a PMOS S/A driving circuit for driving the PMOS S/A, a transmission gate circuit, an NMOS S/A, and an NMOS S/A driving circuit for driving the NMOS S/A. First and second transistors for connecting the local I/O lines to the global I/O lines are installed between adjacent bit lines. The PMOS S/A driving circuit, which is a first driving transistor, and the NMOS S/A driving circuit, which is a second driving transistor, are also installed between adjacent bit lines. Because the semiconductor memory device arranges a PMOS S/A driving circuit, an NMOS S/A driving circuit, and a gating circuit for connecting local I/O lines to global I/O lines, between adjacent bit lines, the chip area is reduced.
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