Silicon single crystal, silicon wafer, and epitaxial wafer

摘要

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1x1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1x1012 atoms/cm3 and carbon doping at a concentration of 0.1x1016-5x1016 atoms/cm3 and/or boron doping at a concentration of 1x1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.