Method for fabricating capacitor device

摘要

After forming a lower electrode by patterning a conducting film formed on a substrate by using an etching gas including chlorine, chlorine remaining on the lower electrode is removed by irradiating the lower electrode with plasma of a gas including fluorine. Thereafter, a capacitor dielectric film made of an insulating metal oxide is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric film.