METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expose a junction region(12) of a silicon substrate(11). A titanium film(14) is formed on the exposed junction region. The first titanium nitride oxide layer(15) is formed on the titanium film. A titanium nitride layer(16) is formed on the first titanium nitride oxide layer. The second titanium nitride oxide layer(17) is formed on the titanium nitride layer. Then, a metal film is formed on the resultant structure.