SINGLE ELECTRON TRANSISTOR HAVING SELF-ALIGNED TRENCH AND FABRICATING METHOD OF THE SAME

摘要

A single electron transistor having a self-aligned trench and a fabricating method thereof are provided to form a tunneling barrier irrelevant to a voltage applied to a gate by forming self-aligned trenches at both sides of the gate. Source and drain regions(22a,24a) are formed on a single crystal silicon layer of an SOI substrate to be separated from each other. A channel region defined by a predetermined small pattern is between the source and drain regions. A gate dielectric(30) is formed on an upper portion of the channel region. A gate(40) is formed on an upper portion of the gate dielectric. A trench(70) is self-aligned at both sides of the gate to be formed in a thickness direction of the channel region. LOCOS dielectric layers(60) are respectively formed on upper portions of the source and drain regions. A dielectric sidewall spacer is formed an upper portion of an end of each LOCOS dielectric layer in parallel with the trench.