METHOD FOR PRODUCING SILICON WAFER AND SILICON WAFER

摘要

Silicon wafer W is thermal-annealed in atmosphere G to form new vacancies therein in a thermal annealing step and atmosphere G in the thermal annealing step contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.