| 摘要 |
In a data storage device that has a plurality of word lines (26, 28), a plurality of bit lines (20, 22, 24), and a resistive crosspoint array of memory cells (40-50), each memory cell is connected to a bit line and connected to an isolation diode (88) that further connects to a respective word line. The isolation diode (88) provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal-semiconductor contact with each diode sharing the word line such that each diode has a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell.
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