| 摘要 |
A silicon oxide film 3' , 3" is formed on each of the main surfaces of a first silicon single crystal substrate 1 (bond wafer) and a second silicon single crystal substrate 2 (base wafer), and the first and second silicon single crystal substrates are then brought into close contact so as to locate the silicon oxide films 3' , 3" in between in an atmosphere of a clean air supplied through a boron-releasable filter, to thereby produce an SOI wafer 10. The second silicon single crystal substrate 2 employed herein comprises a silicon single crystal substrate having a bulk resistivity of 100 OMEGA <.>cm or above. In thus produced SOI wafer 10, the silicon oxide film 3 has a depth profile of boron concentration in which the boron concentration reaches maximum at a thickness-wise position. This ensures manufacturing of SOI wafer excellent in high-frequency characteristics. <IMAGE>
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