| 摘要 |
A smart power device and method for fabricating the same is disclosed in which an impact ionization to a drain region is reduced thereby securing a wide SOA (Safe Operation Area) and improving current driving characteristics. Such a device includes a smart power device comprising: a second conduction type drift region formed in a first conduction type well region by having first, second and (optionally but preferably) third impurity regions corresponding to first, second, and third ion injections with first, second, and third ion injection energies and first, second, and third doses; a first conduction type Dwell region formed adjoining to the second conduction type drift region; a source region and a body contact region both formed in the first conductive type Dwell region; a drain region formed in the second conduction type drift region; an insulating structure formed on an entire surface; a gate electrode layer formed in the insulating structure; a field plate formed to one side of the gate electrode layer and over the second conduction type drift region; and a source electrode layer and a drain electrode layer in contact with the source region and the drain region, respectively.
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