| 摘要 |
<p>A charge trapping device with an electric field distribution layer over a tunneling barrier is provided to keep a uniform threshold voltage according to dimensions of a channel width even if irregular charge concentration exists within a charge trapping structure. A semiconductor substrate comprises a surface with a source region and a drain region in a substrate(104) and separated by a channel region. A multilayer stack over the channel comprises a tunneling barrier dielectric structure(105), a conductive layer(101), a charge trapping structure(106) and an upper part dielectric structure(107). The tunneling barrier dielectric structure with an effective thickness of oxide which is greater than 3 nm is disposed on the surface of the substrate above the channel region. The conductive layer is disposed above the tunneling barrier dielectric structure and the channel region. The charge trapping structure is disposed above the conductive layer and the channel region. The upper part dielectric structure is disposed above the charge trapping structure and the channel region. A memory cell(100) comprise an upper part conductive layer(108) which is disposed above the dielectric structure and the channel region.</p> |
