发明名称 Buried oxide photonic device with large contact and precise aperture
摘要 A photonic device includes a plurality of semi-conductor layers formed on a substrate. The semi-conductor layers include an active layer and a current controlling region in close proximity to the active layer. The current controlling region includes a relatively small electrically conductive section or aperture, and a relatively large non-conductive section. A plurality of channels in the device are arranged to bound the electrically conductive section within their perimeter. The channels are spaced close enough together, and close enough to the desired aperture region to permit a relatively brief oxidation process to precisely isolate the aperture. The remainder of the current controlling region, i.e. beyond the aperture is also altered to present a high resistance. The photonic device also includes a relatively large surface area electrical contact used to drive the device. The large size desirably lowers overall resistance.
申请公布号 US6621844(B1) 申请公布日期 2003.09.16
申请号 US20000484508 申请日期 2000.01.18
申请人 XEROX CORPORATION 发明人 CHUA CHRISTOPHER L.;TREAT DAVID W.
分类号 H01S5/183;(IPC1-7):H01S5/00 主分类号 H01S5/183
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