发明名称 |
Etching substrate material, etching process, and article obtained by etching |
摘要 |
A process of forming a high-definition pattern by etching is provided. A photosensitive resin layer is formed on a metal substrate material having a center line-average surface roughness Ra of up to 0.10 mum and a maximum surface roughness Rmax of up to 1.0 mum to form a resist pattern. Then, the photosensitive resin layer provided on the metal substrate material is exposed to light to form a resist pattern. Finally, etching is carried out to form a pattern on the metal substrate material.
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申请公布号 |
US6620554(B1) |
申请公布日期 |
2003.09.16 |
申请号 |
US19980189977 |
申请日期 |
1998.11.12 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
KOMATSU TAKAYASU;HASHIMOTO DAISUKE;MAKITA AKIRA;FUJIYAMA KOJI |
分类号 |
C23F1/00;C23F1/02;G03F7/00;G03F7/09;G03F7/115;G03F7/40;H01J9/14;H01L23/50;(IPC1-7):G03F9/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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