| 摘要 |
A method for fabricating a capacitor is provided to avoid a leaning phenomenon of a lower electrode by performing a subsequent process after the upper portion of a lower electrode formed in a region of a small CD(critical dimension) is connected to a nitride layer. A buffer oxide layer(25), an etch barrier layer, an oxide layer(29) of a capacitor, a first nitride layer(33) and a first oxide layer are deposited on a lower insulation layer(21) having a storage node contact plug. The stack structure is etched until the storage node contact plug is exposed so that a storage node region is formed. A lower electrode(37) is formed on the storage node region. A second oxide layer(39) is deposited on the resultant structure. The second oxide layer is blanket-etched in a manner that the oxide layer of the capacitor in a region of a dense pattern density is exposed and the first oxide layer in a region of a rare pattern density is exposed. The first oxide layer is removed by a dip-out process. A dry etch process is performed on the resultant structure to eliminate all of the stack structure. The first and second oxide layers of the capacitor can be PSG(phosphorous silicate glass) or PE-TEOS(plasma-enhanced tetraethylorthosilicate).
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