发明名称 |
Capacitor structure of semiconductor device and method for forming the same |
摘要 |
A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active region; a lower electrode region formed in the active region under the upper electrode; and a lightly doped region overlapping with an outer edge of the lower electrode region. In this manner, the resulting breakdown voltage of the device can be increased.
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申请公布号 |
US6621111(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20020279682 |
申请日期 |
2002.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG HO-IK |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/94;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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