发明名称 |
ALKALI ETCHING LIQUID, SILICON WAFER ETCHING METHOD USING THE SAME, AND METHOD FOR DISCRIMINATING FRONT AND REAR SURFACES OF SILICON WAFER USING THE SAME METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide alkali etching liquid which can provide a large shape of a facet and can control the formation of a deep pit, a method for etching a silicon wafer to provide the excellent flatness and small roughness of the rear surface of the wafer of which the front surface is polished as a mirror surface, and also provide a method for discriminating the front and rear surfaces of the silicon wafer which enables the visual recognition of the front and rear surfaces of the wafer having high precision flatness and small surface roughness. SOLUTION: The alkali etching liquid can be obtained by mixing lithium ions into a alkali aqueous solution which is mainly composed of sodium hydroxide or potassium hydroxide. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003257927(A) |
申请公布日期 |
2003.09.12 |
申请号 |
JP20020000552 |
申请日期 |
2002.01.07 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
NORIMOTO MASAFUMI;TAKAISHI KAZUNARI |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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