SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve the hot carrier resistance of an MISFET formed on an SOI substrate as well as the breakdown strength between a source and a drain. SOLUTION: The SOI substrate provided with a semiconductor layer 1a, an insulation layer 1b thereon, and a semiconductor layer 1c thereon is processed by a high-temperature RTN (Rapid Thermal Nitrization) treatment using an N2O (dinitrogen monoxide) gas atmosphere at 1100 to 1200°C, thereby the forming an axynitride (100 or the like) in a boundary between the semiconductor layer 1c and insulation layer 1b and on the surface of the semiconductor layer 1c, and then the oxynitiride on the surface of the semiconductor layer 1c is removed, and an gate oxide film (gate insulation film) 8 is formed on the semiconductor layer 1c and its surface is nitrified. Furthermore, a gate electrode G, and a source and a drain (n-type semiconductor area 14 and p-type semiconductor area 15) is formed to make MISFETs Qn and Qp. COPYRIGHT: (C)2003,JPO