| 摘要 |
PROBLEM TO BE SOLVED: To provide an estimation method of BMD density in a silicon wafer which can estimate BMD density in a silicon wafer before being loaded in a device process, in a comparatively short period, without miscounting fine-sized BMD which cannot be detected by a conventional method. SOLUTION: The estimation method is provided with a first step, a second step and a third step. In the first step, after a plurality of silicon wafers different in the BMD densities are intentionally contaminated by Fe of prescribed concentration, residual Fe concentration in the silicon wafer after heat treatment under a prescribed heat treatment condition is measured, thereby previously obtaining the correlation of the residual Fe concentration to the BMD density. In the second step, after the intentional contamination of Fe and heat treatment are applied to the silicon wafer as an estimation object under the same condition as the first step, the residual Fe concentration is measured. In the third step, the BM density in the silicon wafer as the estimation object is estimated from the residual Fe concentration obtained by the second step on the basis of the correlation. COPYRIGHT: (C)2003,JPO
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