| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of decreasing the number of manufacturing steps of a triple well including a plurality of ion implantation steps and a heat treatment step. SOLUTION: The method for manufacturing a semiconductor device comprises (a) a step for forming a first mask layer 12 having a first opening 14 on a semiconductor substrate 10, (b) a step for forming a first insulation layer 16 on an exposed surface of a semiconductor substrate 10 at the first opening, (c) a step for forming an impurity layer by introducing a second conductivity type first impurity into the semiconductor substrate through the first insulation layer 16, (d) a step for forming a first well 24 by heat treatment and forming a second insulation layer 22 on the exposed surface of the semiconductor substrate at the first opening, (e) a step for forming a second mask layer 26 having a second opening 28 on the first mask layer, and (f) a step for introducing a first conductivity type second impurity 32 into the semiconductor substrate through the second insulation layer to form a second well in the first well 24. COPYRIGHT: (C)2003,JPO
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