| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SBT thin film which has a crystallization temperature of 700°C or lower by a sputtering method and which can be used for processing a ferroelectric memory, and to provide a target for obtaining the same. <P>SOLUTION: A ferroelectric thin film contains a composition constituted of strontium, bismuth, tantalum, silicon and oxygen and represented by a chemical formula: (SrxBiyTa<SB>2.0</SB>O<SB>9</SB>)<SB>1-a</SB>(Bi<SB>2</SB>SiO<SB>5</SB>)<SB>a</SB>, wherein (a) is 0.10 to 0.40, (x) is 0.60 to 0.80, (y) is 2.1 to 2.6. The target for obtaining the ferroelectric thim film is a sintered target represented by a chemical formula: SrxBiyTa<SB>2.0</SB>O<SB>9</SB>)<SB>1-a</SB>(Bi<SB>2</SB>SiO<SB>5</SB>)<SB>a</SB>, wherein (a) is 0.10 to 0.40, (x) is 0.55 to 0.80, (y) is 2.1 to 2.8 and is constituted of a mixed crystal of two phase compounds represented by chemical formulae: SrxBiyTa<SB>2.0</SB>O<SB>9</SB>and Bi<SB>2</SB>SiO<SB>5</SB>. <P>COPYRIGHT: (C)2003,JPO |
