| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a high-withstand voltage transistor and a low-withstand voltage transistor which are different in the drive voltages are arranged in the same substrate. SOLUTION: This semiconductor device is provided with a semiconductor substrate 10 of a first conductivity-type, a first triple well 20 provided with a first well 22 of a second conductivity-type formed on the semiconductor substrate and a second well 24 of a first conductivity-type formed in the first well, a second triple well 30 provided with a third well 32 of a second conductivity-type formed on the semiconductor substrate and a fourth well 34 of a first conductivity-type formed in the third well, a low-withstand voltage transistor 100N of a second conductivity-type formed in the second well, and a high-withstand voltage transistor 300N of a second conductivity-type formed in the fourth well 34. Impurity concentration of the first well 22 of the first triple well is higher than that of the third well 34 of the second triple well. COPYRIGHT: (C)2003,JPO
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