| 摘要 |
PROBLEM TO BE SOLVED: To provide a low temperature cleaning method of semiconductor substrate which may be used for wiring at least tungsten or a tungsten alloy and wiring electrode and aluminum or an aluminum alloy, may assure an excel lent deposition cleaning property, and provide an excellent corrosion preventing effect for metal wiring in a semiconductor element and an LCD and for various members such as metal thin film or the like, and to provide a semiconductor substrate cleaning method which can reduce installation space of a cleaning apparatus and the storing space of cleaning liquid. SOLUTION: In this semiconductor substrate cleaning method, a semiconductor substrate is provided with at least (A) wiring or an electrode of tungsten or tungsten alloy, and (B) the wiring of aluminum or an aluminum alloy under temperatures of 15 to 60°C using a composition of a cleaning agent. The cleaning agent contains (a) an acid an/or salt thereof where an acid dissociation index pKa<SB>n</SB>(25°C) of the n-th stage of the n-valent basic acid is 3 or more but 11 or less, (b) water and a (c) chelating agent with nitrogen atoms within the molecule. COPYRIGHT: (C)2003,JPO
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