发明名称 ELECTRON AMPLIFIER WITH CARBON NANOTUBE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an electron amplifier with a carbon nanotube and a method of manufacturing the same. SOLUTION: This electron amplifier has a substrate 33 on which a plurality of through-holes 32 are formed, a resistive layer 35 which is formed on the inside wall of the through-holes 32, an electron emission layer 37 which is formed on the resistive layer 35 and includes a carbon nanotube 45, and an electrode layer 31 which is formed on the upper and lower parts of the substrate 33. In the electron amplifier, the electron emission layer 37 is characterized by that it consists of either oxide material or fluoride material with large secondary electron emission coefficient. The electron amplifier with high secondary electron emission characteristics and the manufacturing method for the electron amplifier, which can easily manufacture a large-sized display element, are provided. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257359(A) 申请公布日期 2003.09.12
申请号 JP20030041994 申请日期 2003.02.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 HUR JUNG-NA;YI WHI-KUN;LEE JEONG-HEE;YU SE-GI;JEONG TAE-WON;LEE CHANG SOO
分类号 H01J9/12;H01J1/32;H01J43/04;H01J43/24;(IPC1-7):H01J43/24 主分类号 H01J9/12
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