MATERIAL FOR FORMING INTERLAYER INSULATION FILM OF SEMICONDUCTOR DEVICE, AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a material for forming an interlayer insulation film which has a sufficiently low dielectric constant and is capable of forming an interlayer insulation film having high mechanical strength and high adhesiveness by a simple manufacturing method. SOLUTION: The material for forming the interlayer insulation film contains a reactive product of an aminoalkoxysilane compound expressed by a general formula (1) and a tetracarboxylic dianhydride expressed by a general formula (2), where R1is a bivalent organic group including carbon atoms directly bonded with silicon atoms, R2and R3are univalent hydrocarbon groups each including one to six carbon atoms, where R2and R3may be the same or different, and n is an integer of 1 to 3, and R4is a tetravalent organic group. COPYRIGHT: (C)2003,JPO