| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device provided with DLL by which deterioration of characteristics caused by power source noise is prevented. <P>SOLUTION: This device is provided with DLL consisting of a DLL peripheral circuit 400 and a variable delay line 440, a data output bus 200, a general purpose power source pad 470, a variable delay line power source pad 480, and a peripheral circuit power source pad 490. The data output bus 200 outputs outputted data synchronizing with an internal clock. The DLL generates an internal clock by delaying an external clock in accordance with a delay control signal. A general purpose power source supplied to a data output circuit is inputted to the general purpose power source pad 470, a variable delay line exclusive power source supplied to the variable delay line is inputted to the variable delay line power source pad 480, and a peripheral circuit exclusive power source supplied to the DLL peripheral circuit 400 is inputted to the peripheral circuit power source pad 490. <P>COPYRIGHT: (C)2003,JPO |
