| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an LED of such a structure as a transparent conductive film of metal oxide is employed as a current distribution film in which the forward working voltage Vf is lowered while eliminating variation of Vf among the elements by making possible to lower the resistance of the transparent conductive film. <P>SOLUTION: A light emitting part consisting of a first conductivity type clad layer 2 and a second conductivity type clad layer 4 sandwiching an active layer 3 is formed on a first conductivity type substrate 1, a transparent conductive layer 8 of metal oxide is formed thereon, an upper electrode 9 is formed at a part on the surface of the transparent conductive layer, and an electrode 10 is formed entirely or partially on the surface of the first conductivity type substrate 1 opposite to the side where the light emitting layer is formed. In such a semiconductor light emitting element, a multilayer structure of a Zn layer 6 and an Ni layer 7 is provided between the second conductivity type clad layer 4 and the transparent conductive layer 8. <P>COPYRIGHT: (C)2003,JPO |
