| 发明名称 |
Termination design for deep source electrode MOSFET |
| 摘要 |
A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.
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| 申请公布号 |
US7579650(B2) |
申请公布日期 |
2009.08.25 |
| 申请号 |
US20070890849 |
申请日期 |
2007.08.08 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
CAO JIANJUN;HENSON TIMOTHY |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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