发明名称 Manufacturing apparatus of an insulation film
摘要 The invention provides apparatus for forming an insulating film which is able to reduce the decrease in the light amount due to the light transmittable window, to process the large scale base plate, and to improve the oxidation speed. In apparatus for forming an insulating film on a semiconductor surface by oxidizing the surface of the semiconductor as a substrate 6 by means of oxygen atom active species generated when irradiating a N2+O2 mixed gas 10 including at least oxygen with the light emitted from a xenon excimer lamp 1, wherein there are provided a gas intake port 8 and a gas exhaust port 9, by both of which the pressure of the atmosphere in the light source portion 2 sealed with a nitrogen gas 3 absorbing no light from the xenon excimer lamp 1 at an atmospheric pressure is kept approximately equal to the pressure of the N2+O2 mixed gas 10 surrounding the surface portion of the substrate 6.
申请公布号 US2003168004(A1) 申请公布日期 2003.09.11
申请号 US20030356721 申请日期 2003.01.30
申请人 NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA;GOTO MASASHI 发明人 NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA;GOTO MASASHI
分类号 H01L29/78;C23C8/12;C30B33/00;H01L21/00;H01L21/31;H01L21/316;H01L21/336;H01L29/786;(IPC1-7):C23C14/00 主分类号 H01L29/78
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