发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
Reliability of crystalline TFTs is improved in a large area integrated circuit typified by an active matrix type liquid crystal display device. In TFTs having an LDD structure, a region whose LDD region overlaps with a gate electrode and a region not overlapping with the gate electrode are fabricated inside one TFT. To accomplish this structure, n-channel TFTs are fabricated in non-self-alignment whereas p-channel TFTs are fabricated in self-alignment.
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申请公布号 |
US2003168661(A1) |
申请公布日期 |
2003.09.11 |
申请号 |
US20030347350 |
申请日期 |
2003.01.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/036 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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