发明名称 Semiconductor device and method of fabricating the same
摘要 Reliability of crystalline TFTs is improved in a large area integrated circuit typified by an active matrix type liquid crystal display device. In TFTs having an LDD structure, a region whose LDD region overlaps with a gate electrode and a region not overlapping with the gate electrode are fabricated inside one TFT. To accomplish this structure, n-channel TFTs are fabricated in non-self-alignment whereas p-channel TFTs are fabricated in self-alignment.
申请公布号 US2003168661(A1) 申请公布日期 2003.09.11
申请号 US20030347350 申请日期 2003.01.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN
分类号 H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/036 主分类号 H01L21/336
代理机构 代理人
主权项
地址